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  Datasheet File OCR Text:
 HYBRID GATE DRIVER IC FOR IGBT
GH-038
SanRex Hybrid Gate Driver IC for IGBT High Voltage isolation by Photo Coupler Enable to drive IGBT up to dual 300A module Operate with single power source Support to high-density system design Built-in opto coupler input resistor 330
The model name is indicated on the back of the product.
Maximum Ratings
Symbol VCC VOH VRB VFIN IF Ig1 Ig2 Item Supply Voltage Forward Bias Output Voltage Reverse Bias Supply Voltage Photo Coupler Input Voltage Photo Coupler Input Current Output Forward Current Output Reverse Current Switching Time-High side Switching Time-Low side Rise Time Fall Time Common Mode Transient immunity Input Output Isolation Voltage Operational Ambient Temperature Storage Temperature AC50/60HZ 1minute VFIN 5.0V PW 2 s Dutycycle 0.05 PW 2 s Dutycycle 0.05 VCC 26.0V IF 10mA VCC 26.0V IF 10mA VCC 26.0V IF 10mA VCC 26.0V IF 10mA 5k 09.0 VCC 26.0V VCC 26.0V Conditions Min. 23.0 16.0 07.0
Unless otherwise Tj 25 Ratings Typ. 26.0 18.0 08.0 05.0 10.6 04.0 04.0 Max. 28.0 19.0 09.0 07.0 12.2 06.0 06.0 01.5 01.5 01.0 01.0 10k AC2500 25 40 80 125 V V V V
Unit
mA A A s s s s V/ s V
tPLH tPHL tr tf
dv/dt Visc Topr Tstg
Equivalent Circuit
67
GH-038
Examble of Application
1 To assure required voltage the capacitor >10 F hase to be connected as close to the Driver IC as possible. 2 For the value of gate resistor, the resistance value described in IGBT Module specification is recommended. The gate resistance should be determined at less than 6A of peak output current judging from signal delay time and surge voltage.
Switching wave form
68


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